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Hlavní stránka>BS EN 62047-12:2011 Semiconductor devices. Micro-electromechanical devices Bending fatigue testing method of thin film materials using resonant vibration of MEMS structures
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sklademVydáno: 2011-11-30
BS EN 62047-12:2011 Semiconductor devices. Micro-electromechanical devices Bending fatigue testing method of thin film materials using resonant vibration of MEMS structures

BS EN 62047-12:2011

Semiconductor devices. Micro-electromechanical devices Bending fatigue testing method of thin film materials using resonant vibration of MEMS structures

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Označení normy:BS EN 62047-12:2011
Počet stran:34
Vydáno:2011-11-30
ISBN:978 0 580 76301 4
Status:Standard
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BS EN 62047-12:2011


This standard BS EN 62047-12:2011 Semiconductor devices. Micro-electromechanical devices is classified in these ICS categories:
  • 31.080.99 Other semiconductor devices

This part of IEC 62047 specifies a method for bending fatigue testing using resonant vibration of microscale mechanical structures of MEMS (micro-electromechanical systems) and micromachines. This standard applies to vibrating structures ranging in size from 10 µm to 1 000 µm in the plane direction and from 1 µm to 100 µm in thickness, and test materials measuring under 1 mm in length, under 1 mm in width, and between 0,1 µm and 10 µm in thickness.

The main structural materials for MEMS, micromachine, etc. have special features, such as typical dimensions of a few microns, material fabrication by deposition, and test piece fabrication by means of non-mechanical machining, including photolithography. The MEMS structures often have higher fundamental resonant frequency and higher strength than macro structures. To evaluate and assure the lifetime of MEMS structures, a fatigue testing method with ultra high cycles (up to 1012) loadings needs to be established. The object of the test method is to evaluate the mechanical fatigue properties of microscale materials in a short time by applying high load and high cyclic frequency bending stress using resonant vibration.