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Homepage>BS IEC 63068-2:2019 Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices Test method for defects using optical inspection

sklademVydáno: 2019-02-08

BS IEC 63068-2:2019

Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices Test method for defects using optical inspection

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Označení normy:	BS IEC 63068-2:2019
Počet stran:	28
Vydáno:	2019-02-08
ISBN:	978 0 580 51374 9
Status:	Standard

DESCRIPTION

BS IEC 63068-2:2019

This standard BS IEC 63068-2:2019 Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices is classified in these ICS categories:

31.080.99 Other semiconductor devices

IEC 63068-2:2019(E) provides definitions and guidance in use of optical inspection for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies optical images to enable the detection and categorization of the defects for SiC homoepitaxial wafers. This document deals with a non-destructive test method for the defects so that destructive methods such as preferential etching are out of scope in this document.

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