PRICES include / exclude VAT

Homepage>BS IEC 63068-3:2020 Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices Test method for defects using photoluminescence

BS IEC 63068-3:2020

Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices Test method for defects using photoluminescence

Anglicky Secure PDF

Immediate download

254.31 €

You can read the standard for 1 hour. More information in the category: E-reading

Reading the standard

for 1 hour

25.43 €

You can read the standard for 24 hours. More information in the category: E-reading

Reading the standard

for 24 hours

76.29 €

Anglicky Hardcopy

In stock

254.31 €

Označení normy:	BS IEC 63068-3:2020
Počet stran:	28
Vydáno:	2020-07-24
ISBN:	978 0 539 02136 3
Status:	Standard

DESCRIPTION

BS IEC 63068-3:2020

This standard BS IEC 63068-3:2020 Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices is classified in these ICS categories:

31.080.99 Other semiconductor devices
31.080.01 Semiconductor devices in general

IEC 63068-3:2020 provides definitions and guidance in use of photoluminescence for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies photoluminescence images and emission spectra to enable the detection and categorization of the defects in SiC homoepitaxial wafers.

Print RECOMMEND