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Homepage>BS IEC 63068-3:2020 Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices Test method for defects using photoluminescence

sklademVydáno: 2020-07-24

BS IEC 63068-3:2020

Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices Test method for defects using photoluminescence

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Označení normy:	BS IEC 63068-3:2020
Počet stran:	28
Vydáno:	2020-07-24
ISBN:	978 0 539 02136 3
Status:	Standard

DESCRIPTION

BS IEC 63068-3:2020

This standard BS IEC 63068-3:2020 Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices is classified in these ICS categories:

31.080.99 Other semiconductor devices
31.080.01 Semiconductor devices in general

IEC 63068-3:2020 provides definitions and guidance in use of photoluminescence for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies photoluminescence images and emission spectra to enable the detection and categorization of the defects in SiC homoepitaxial wafers.

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