Homepage>BS IEC 63068-3:2020 Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices Test method for defects using photoluminescence
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sklademVydáno: 2020-07-24
BS IEC 63068-3:2020
Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices Test method for defects using photoluminescence
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This standard BS IEC 63068-3:2020 Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices is classified in these ICS categories:
31.080.99 Other semiconductor devices
31.080.01 Semiconductor devices in general
IEC 63068-3:2020 provides definitions and guidance in use of photoluminescence for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies photoluminescence images and emission spectra to enable the detection and categorization of the defects in SiC homoepitaxial wafers.
