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BS IEC 63275-1:2022
Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors Test method for bias temperature instability
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| Označení normy: | BS IEC 63275-1:2022 |
| Počet stran: | 16 |
| Vydáno: | 2022-10-05 |
| ISBN: | 978 0 539 12126 1 |
| Status: | Standard |
DESCRIPTION
BS IEC 63275-1:2022
This standard BS IEC 63275-1:2022 Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors is classified in these ICS categories:
- 31.080.30 Transistors