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Homepage>IEC 62047-16:2015 - Semiconductor devices - Micro-electromechanical devices - Part 16: Test methods for determining residual stresses of MEMS films - Wafer curvature and cantilever beam deflection methods
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sklademVydáno: 2015-03-05
IEC 62047-16:2015 - Semiconductor devices - Micro-electromechanical devices - Part 16: Test methods for determining residual stresses of MEMS films - Wafer curvature and cantilever beam deflection methods

IEC 62047-16:2015

Semiconductor devices - Micro-electromechanical devices - Part 16: Test methods for determining residual stresses of MEMS films - Wafer curvature and cantilever beam deflection methods

Dispositifs à semiconducteurs - Dispositifs microélectromécaniques - Partie 16: Méthodes d'essai pour déterminer les contraintes résiduelles des films de MEMS - Méthodes de la courbure de la plaquette et de déviation de poutre en porte-à-faux

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Označení normy:IEC 62047-16:2015
Vydáno:2015-03-05
Jazyk:Anglicky/Francouzsky
DESCRIPTION

IEC 62047-16:2015

IEC 62047-16:2015 specifies the test methods to measure the residual stresses of films with thickness in the range of 0,01 μ to 10 μ in MEMS structures fabricated by wafer curvature or cantilever beam deflection methods.

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