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Homepage>IEC 62373-1:2020 - Semiconductor devices - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET
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sklademVydáno: 2020-07-15
IEC 62373-1:2020 - Semiconductor devices - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET

IEC 62373-1:2020

Semiconductor devices - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET

Dispositifs à semiconducteurs - Essai de stabilité de température en polarisation pour transistors à effet de champ métal-oxyde-semiconducteur (MOSFET) - Partie 1: Essai rapide de BTI pour les MOSFET

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Označení normy:IEC 62373-1:2020
Vydáno:2020-07-15
Jazyk:Anglicky/Francouzsky
DESCRIPTION

IEC 62373-1:2020

IEC 62373-1:2020 provides the measurement procedure for a fast BTI (bias temperature instability) test of silicon based metal-oxide semiconductor field-effect transistors (MOSFETs). This document also defines the terms pertaining to the conventional BTI test method.

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