Menu
0
Total price
0 €
PRICES include / exclude VAT
Homepage>PD ISO/TR 22335:2007 Surface chemical analysis. Depth profiling. Measurement of sputtering rate. Mesh-replica method using a mechanical stylus profilometer
sklademVydáno: 2007-08-31
PD ISO/TR 22335:2007 Surface chemical analysis. Depth profiling. Measurement of sputtering rate. Mesh-replica method using a mechanical stylus profilometer

PD ISO/TR 22335:2007

Surface chemical analysis. Depth profiling. Measurement of sputtering rate. Mesh-replica method using a mechanical stylus profilometer

Format
Availability
Price and currency
Anglicky Secure PDF
Immediate download
248.85 €
You can read the standard for 1 hour. More information in the category: E-reading
Reading the standard
for 1 hour
24.89 €
You can read the standard for 24 hours. More information in the category: E-reading
Reading the standard
for 24 hours
74.66 €
Anglicky Hardcopy
In stock
248.85 €
Označení normy:PD ISO/TR 22335:2007
Počet stran:28
Vydáno:2007-08-31
ISBN:978 0 580 54014 1
Status:Standard
DESCRIPTION

PD ISO/TR 22335:2007


This standard PD ISO/TR 22335:2007 Surface chemical analysis. Depth profiling. Measurement of sputtering rate. Mesh-replica method using a mechanical stylus profilometer is classified in these ICS categories:
  • 71.040.40 Chemical analysis

This Technical Report describes a method for determining ion-sputtering rates for depth profiling measurements with Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS) where the specimen is ion-sputtered over a region with an area between 0,4 mm2 and 3,0 mm2. This Technical Report is applicable only to a laterally homogeneous bulk or single-layered material where the ion-sputtering rate is determined from the sputtered depth, as measured by a mechanical stylus profilometer, and sputtering time.

This Technical Report provides a method to convert the ion-sputtering time scale to sputtered depth in a depth profile by assuming a constant sputtering velocity. This method has not been designed for, or tested using, a scanning probe microscope system. It is not applicable to the case where the sputtered area is less than 0,4 mm2 or where the sputter-induced surface roughness is significant compared with the sputtered depth to be measured.