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sklademVydáno: 2019-11-13
IEC 60747-9:2019
Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)
Dispositifs à semiconducteurs - Partie 9: Dispositifs discrets - Transistors bipolaires à grille isolée (IGBT)
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Anglicky/Francouzsky Tisk
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| Označení normy: | IEC 60747-9:2019 |
| Vydáno: | 2019-11-13 |
| Jazyk: | Anglicky/Francouzsky |
Popis
IEC 60747-9:2019
IEC 60747-9:2019 specifies product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs). This third edition includes the following significant technical changes with respect to the previous edition: reverse-blocking IGBT and its related technical contents have been added; reverse-conducting IGBT and its related technical contents have been added; some parts of the previous edition have been amended, combined or deleted.