Přihlásit seRegistrovat se
Jazyk czen
Menu
KontaktOBCHODNÁPOVĚDAE-ReadingNovinky
Hledání
0
Celková cena
0 Kč
Cena s DPH / bez DPH
Hlavní stránka>IEC 63068-2:2019 - Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 2: Test method for defects using optical inspection
Sponsored link
sklademVydáno: 2019-01-30
IEC 63068-2:2019 - Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 2: Test method for defects using optical inspection

IEC 63068-2:2019

Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 2: Test method for defects using optical inspection

Formát
Dostupnost
Cena a měna
Anglicky Tisk
skladem
4290 Kč
Anglicky PDF
K okamžitému stažení
4290 Kč
Označení normy:IEC 63068-2:2019
Vydáno:2019-01-30
Jazyk:Anglicky
Popis

IEC 63068-2:2019

IEC 63068-2:2019(E) provides definitions and guidance in use of optical inspection for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies optical images to enable the detection and categorization of the defects for SiC homoepitaxial wafers. This document deals with a non-destructive test method for the defects so that destructive methods such as preferential etching are out of scope in this document.

Tisk