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Hlavní stránka>IEC 63275-2:2022 - Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operation
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sklademVydáno: 2022-05-11
IEC 63275-2:2022 - Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operation

IEC 63275-2:2022

Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operation

Dispositifs à semiconducteurs - Méthode d’essai de fiabilité pour les transistors à effet de champ métal-oxyde-semiconducteurs discrets en carbure de silicium - Partie 2: Méthode d’essai de la dégradation bipolaire due au fonctionnement de la diode intrinsèque

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Anglicky/Francouzsky Tisk
skladem
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Anglicky/Francouzsky PDF
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Označení normy:IEC 63275-2:2022
Vydáno:2022-05-11
Jazyk:Anglicky/Francouzsky
Popis

IEC 63275-2:2022

IEC 63275-2:2022 gives the test method and a procedure using this method to evaluate the on-state voltage change, on-state resistance change and reverse drain voltage change of silicon carbide (SiC) power MOSFET devices due to body diode operation. This test is not generally requested for Si power transistors.

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